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Positive photoresist for Integrated Circuit

 

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Introduction

1. special note:

You will found the specifications of specific model and related test reports in download center.

2.Application:

Specific applications in the field of integrated circuits : the production of integrated circuits (involving metal layer, passivation layer, ion implantation layer lithography); advanced packaging of integrated circuit etc..

3 Technical parameters:

Main technical parameters of photoresist for integrated circuits:

Mainly include: RD-4000, RD-6000 and other series, the main technical parameters of different series photoresist are as follows:

Items

Series products

Main parameters

1

RD-4000 series

Moisture: <0.5%

Particles (0.5um particles, /ml):<100

Trace metals (K, Na, Fe, ppb): <50

Film thickness: 1.0~4.5um

Resolution: 0.4um (i-line exposure)

2

RD-6000 series

Moisture: <0.5%

Particles (0.5um particles, /ml):<100

Trace metals (K, Na, Fe, ppb): <100

Film thickness: 3.0~15um

Resolution: 0.65um (i-line exposure)


Main technical parameters of photoresist for integrated circuits:

Mainly include: RD-4000, RD-6000 and other series, the main technical parameters of different series photoresist are as follows:

Items

Series products

Main parameters

1

RD-4000 series

Moisture: <0.5%

Particles (0.5um particles, /ml):<100

Trace metals (K, Na, Fe, ppb): <50

Film thickness: 1.0~4.5um

Resolution: 0.4um (i-line exposure)

2

RD-6000 series

Moisture: <0.5%

Particles (0.5um particles, /ml):<100

Trace metals (K, Na, Fe, ppb): <100

Film thickness: 3.0~15um

Resolution: 0.65um (i-line exposure)